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Charged Device (CDM) model papers
  Source:Original Site   Release time:2015-08-28   Click:   Editor:SUGO Networks
  1 Chip-level simulation for CDM failures in multi-power ICs
  2 Maximum likelihood multipath channel estimation for synchronous-CDM systems
  5 Influence of the device package on the results of CDM tests-consequences for tester characterization and test procedure
  7 The real CDM field induced ESD waveform from MR heads
  8 Influence of tester, test method, and device type on CDM ESD testing
  Attenna
  9 A correlation study between different types of CDM testers and “real” manufacturing in-line leakage failures
  10 Chip-level charged-device modeling and simulation in CMOS integrated circuits
  11 Advanced CMOS protection device trigger mechanisms during CDM
  12 The importance of standardizing CDM ESD test head parameters to obtain data correlation
  13 Issues concerning CDM ESD verification modules-the need to move to alumina
  charge plate monitor
  14 OCDM a new multicode CDM radio transmission system based on cyclic modified M-sequences-performance evaluation using prototype
  15 Performance of multi-carrier CDM and COFDM in fading channels
  electrometer
  16 Simulation of complete CMOS IO circuit response to CDM stress
  17 Advanced CMOS protection device trigger mechanisms during CDM
  19 A high-speed DSRC system assisted by an overfill CDM for future seamless road-vehicle communication systems
  20 Design and performance of quasi-synchronous multi-carrier CDMA system
  22 A route design algorithm for multiple-encoding optical CDM switching network
  23 Performance analysis of a multi-code CDM transmission scheme based on cyclic extended spread code as a extension of 3rd generation CDMA system
  24 MC-CDM-a promising approach for digital broadcast in the AM-band
  25 Degradation of GMR and TMR recording heads using very-short-duration ESD transients
  26 Design of integrated services digital broadcasting systems using multirate optical fiber code-division multiplexing
  27 Very fast transmission line pulsing of integrated structures and the charged device model
  28 Variable-bit-rate video transmission systems using optical fiber code-division multiplexing scheme
  35 A simulation analysis of quarter-micron CMOS LSI input circuit behavior under CDM-ESD for protection device improvement
  36 Investigation into socketed CDM (SDM) tester parasitics
  37 Experiments on high-speed all-optical code-division multiplexing (CDM) systems using a 2n prime code
  38 CDM an approach to learning in text categorization
  39 Latent gate oxide defects caused by CDM-ESD
  40 Quench simulation of the 40 mm aperture SSC-quadrupole magnet connected in series with 50 mm aperture SSC-dipole magnets
  41 Database model for design data
  42 Error-free 1.24 Gbs 4-chip coherent CDM code converter
  46 An experiment on a CDM subcarrier multiplexed optical-fiber local area network
  61 Reproducibility of field failures by ESD models - comparison of HBM, socketed CDM and non-socketed CDM
  62 A combined socketed and non-socketed CDM test approach for eliminating real-world CDM failures
  67 Study of ESD evaluation methods for charged device model
  73 ESD evaluation methods for a charged device model
  93 ESD failure finger-print-an effective and accurate method for root cause determination
  98 Influence of well profile and gate length on the ESD performance of a fully silicided 0.25 μm CMOS technology
  99 Wide-band planar monopole antennas
  114 4.5 GHz time domain measurement of voltage transition duration due to micro gap discharge as low voltage ESD
  119 A case study on hidden ESD events of GMR HGA dynamic test fixture
  120 Breakdown and latent damage of ultra-thin gate oxides under ESD stress conditions
  123 Latent ESD failures in Schottky barrier diodes
  125 ESD-sensitivity study of GMR recording heads with a flex-on-suspension head-gimbal assembly
  137 Simulation study for the CDM ESD behaviour of the grounded-gate NMOS
  138 A compact model for the grounded-gate nMOS behaviour under CDM ESD stress
  139 Charged device model (CDM) metrology limitations and problems
  158 Analysis of the charge transfer of models for electrostatic discharge (ESD) and semiconductor devices
  162 Analysis of the charge discharge processes for the basic ESD models
  192 Constant charge and constant potential models for electrostatic discharge (ESD)
  194 A novel on-chip electrostatic discharge (ESD) protection for beyond 500 MHz DRAM
  196 Sub-micron chip ESD protection schemes which avoid avalanching junctions
  198 Analysis of models for electrostatic discharge (ESD) and semiconductor devices

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